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| BSS80, BSS82 PNP Silicon Switching Transistors High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (NPN) 3 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 C Junction temperature Storage temperature 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS80 40 60 5 800 1 100 200 330 150 BSS82 60 Unit V V mA A mA mW C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS80, BSS82 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 A, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE IEBO ICBO ICBO V(BR)EBO V(BR)CEO typ. max. Unit V 40 60 10 10 10 nA A nA 40 75 40 100 40 100 40 100 40 50 120 300 V 0.4 1.6 1.3 2.6 BSS80 BSS82 V(BR)CBO 60 5 - BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) Pulse test: t =300s, D = 2% VCEsat VBEsat - 2 Nov-30-2001 BSS80, BSS82 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. AC Characteristics Transition frequency IC = 20 mA, VCE = 20 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Delay time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Rise time VCC = 30 V, IC = 150 mA, IB1 = 15 mA, VBE(off) = 0.5 V Storage time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA Fall time VCC = 30 V, IC = 150 mA, IB1 =IB2 = 15mA tf 30 tstg 80 tr 40 td 10 ns Ccb 6 pF fT 250 MHz typ. max. Unit Test circuits Delay and rise time -30 V 200 Input Z 0 = 50 t r < 2 ns 0 -16 V 200 ns EHN00047 Storage and fall time -6 V +15 V Input Z 0 = 50 t r < 2ns 0 -30 V 200 ns EHN00048 Osc. 1 k 50 t r < 5 ns 1 k 50 1 k 37 Osc. t r < 5 ns 3 Nov-30-2001 BSS80, BSS82 Total power dissipation Ptot = f(TS) Collector-base capacitance CCB = f (VCB) f = 1MHz 10 2 pF Ccb 5 BSS 80/82 EHP00680 360 mW 300 270 P tot 240 210 180 150 120 90 60 30 0 0 15 30 45 60 75 90 105 120 10 1 5 C 150 TS 10 0 10 -1 5 10 0 5 10 1 V V CB 5 10 2 Permissible pulse load Ptotmax / PtotDC = f (tp ) 10 3 Ptot max 5 Ptot DC BSS 80/82 EHP00681 Transition frequency fT = f (IC) VCE = 20V 10 3 MHz fT 5 BSS 80/82 EHP00682 D= tp T tp T 10 2 5 10 1 5 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 5 10 0 10 -6 10 -5 10 -4 10 -3 10 -2 s tp 10 0 10 1 10 0 5 10 1 5 10 2 mA 5 10 3 C 4 Nov-30-2001 BSS80, BSS82 Saturation voltage IC = f (VBEsat , VCEsat) hFE = 10 10 3 mA BSS 80/82 EHP00683 Delay time t d = f (IC) Rise time tr = f (IC) 10 3 ns BSS 80/82 EHP00684 C 10 2 5 VCE VBE t r, t d 5 VBE = 0 V, VCC = 10 V, VBE = 20 V, VCC = 30 V tr 10 1 5 10 2 td 5 10 0 5 10 -1 0 0.2 0.4 0.6 0.8 1.0 1.2 V 1.6 10 1 0 10 5 10 1 VBE sat , VCE sat 5 10 2 mA 5 10 3 C Storage time tstg = f(IC) Fall time t f = f (IC) 10 3 ns t stg 5 BSS 80/82 EHP00685 10 3 ns tf 5 BSS 80/82 EHP00686 VCC = 30 V h FE = 20 h FE = 10 10 2 10 2 5 h FE = 10 h FE = 20 5 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 10 1 0 10 5 10 1 5 10 2 mA 5 10 3 C C 5 Nov-30-2001 BSS80, BSS82 DC current gain hFE = f (IC ) VCE = 10V 10 3 BSS 80/82 EHP00687 h FE 5 150 C 25 C 10 2 -50 C 5 10 1 -1 10 10 0 10 1 10 C 2 mA 10 3 6 Nov-30-2001 |
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